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InAlN/GaN heterostructures for microwave power and beyond:

, In: 2009 IEEE International Electron Devices Meeting (IEDM),

Kohn, E. ; Alomari, M. ; Denisenko, A.... - p. None , 2009

Link: https://doi.org/10.1109/IEDM.2009.5424395

RT 
T1 <cTitle>2009 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>InAlN/GaN heterostructures for microwave power and beyond</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-5424395&Exemplar=1&LAN=DE
				
A1 Kohn, E.
A1 Alomari, M.
A1 Denisenko, A.
A1 Dipalo, M.
A1 Maier, D.
A1 Medjdoub, F.
A1 Pietzka, C.
A1 Delage, S.
A1 diForte- Poisson, M.-A.
A1 Morvan, E.
A1 Sarazin, N.
A1 Jacquet, J.-C.
A1 Dua, C.
A1 Carlin, J.-F.
A1 Grandjean, N.
A1 Py, M. A.
A1 Gonschorek, M.
A1 Kuzmik, J.
A1 Pogany, D.
A1 Pozzovivo, G.
A1 Ostermaier, C.
A1 Toth, L.
A1 Pecz, B.
A1 De Jaeger, J.-C.
A1 Gaquiere, C.
A1 Cico, K.
A1 Frohlich, K.
A1 Georgakilas, A. I.
A1 Iliopoulos, E.
A1 Konstantinidis, G.
A1 Giessen, C.
A1 Heuken, M.
A1 Schineller, B.
YR 2009
SN 0163-1918
SN 2156-017X
K1 Gallium nitride
K1 Oxidation
K1 FETs
K1 Lattices
K1 Chemicals
K1 Robust stability
K1 Transconductance
K1 Passivation
K1 Interface states
K1 Thermal management
SP None
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2009.5424395
DO https://doi.org/10.1109/IEDM.2009.5424395
SF ELIB - SuUB Bremen

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