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Methodology of design of millimeter wave power amplifiers c..:
, In:
2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)
,
Quemerais, T.
;
Moquillon, L.
;
Fournier, J.-M.
.. - p. 1-4 , 2010
Link:
https://doi.org/10.1109/WAMICON.2010.5461881
RT T1 <cTitle>2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON)</cTitle>: T1 <Title>Methodology of design of millimeter wave power amplifiers complying with 125°C electromigration design rules in advanced CMOS technology</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-5461881&Exemplar=1&LAN=DE A1 Quemerais, T. A1 Moquillon, L. A1 Fournier, J.-M. A1 Benech, P. A1 Corrao, N. YR 2010 K1 Millimeter wave technology K1 CMOS technology K1 Design methodology K1 Power amplifiers K1 Electromigration K1 Millimeter wave transistors K1 CMOS process K1 Millimeter wave circuits K1 Semiconductor device modeling K1 Voltage K1 CMOS mmw circuits K1 65nm technology K1 power amplifier K1 microstrip lines K1 electromigration SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WAMICON.2010.5461881 DO https://doi.org/10.1109/WAMICON.2010.5461881 SF ELIB - SuUB Bremen
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