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1 Ergebnisse
1
DC hot carrier stress effect on CMOS 65nm 60 GHz power ampl..:
, In:
2010 IEEE Radio Frequency Integrated Circuits Symposium
,
Quemerais, T.
;
Moquillon, L.
;
Huard, V.
... - p. 351-354 , 2010
Link:
https://doi.org/10.1109/RFIC.2010.5477310
RT T1
2010 IEEE Radio Frequency Integrated Circuits Symposium
: T1
DC hot carrier stress effect on CMOS 65nm 60 GHz power amplifiers
UL https://suche.suub.uni-bremen.de/peid=ieee-5477310&Exemplar=1&LAN=DE A1 Quemerais, T. A1 Moquillon, L. A1 Huard, V. A1 Fournier, J.-M. A1 Benech, P. A1 Corrao, N. YR 2010 SN 2375-0995 SN 1529-2517 SN 1529-2517 K1 Hot carriers K1 Stress K1 Power amplifiers K1 Threshold voltage K1 Transconductance K1 MOSFETs K1 Aging K1 Semiconductor device modeling K1 Degradation K1 Gain measurement K1 CMOS mmw circuits K1 65nm technology K1 power amplifier K1 hot carrier stress K1 reliability SP 351 OP 354 LK http://dx.doi.org/https://doi.org/10.1109/RFIC.2010.5477310 DO https://doi.org/10.1109/RFIC.2010.5477310 SF ELIB - SuUB Bremen
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