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1
Comparison of GaN-based MOS structures with different inter..:
, In:
2010 27th International Conference on Microelectronics Proceedings
,
Al Alam, E.
;
Cortes, I.
;
Besland, M. P.
... - p. 459-462 , 2010
Link:
https://doi.org/10.1109/MIEL.2010.5490444
RT T1
2010 27th International Conference on Microelectronics Proceedings
: T1
Comparison of GaN-based MOS structures with different interfacial layer treatments
UL https://suche.suub.uni-bremen.de/peid=ieee-5490444&Exemplar=1&LAN=DE A1 Al Alam, E. A1 Cortes, I. A1 Besland, M. P. A1 Regreny, P. A1 Goullet, A. A1 Morancho, F. A1 Cazarre, A. A1 Cordier, Y. A1 Isoird, K. A1 Olivie, F. YR 2010 K1 Plasma temperature K1 Gallium nitride K1 Capacitance-voltage characteristics K1 Plasma measurements K1 Chemical analysis K1 Chemical technology K1 Performance analysis K1 Temperature measurement K1 MOS capacitors K1 Plasma chemistry SP 459 OP 462 LK http://dx.doi.org/https://doi.org/10.1109/MIEL.2010.5490444 DO https://doi.org/10.1109/MIEL.2010.5490444 SF ELIB - SuUB Bremen
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