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III-V MOSFETs: Scaling laws, scaling limits, fabrication pr..:

, In: 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM),

Rodwell, M. J. W. ; Shin, B. ; Lee, Yong-ju... - p. 1-6 , 2010

Link: https://doi.org/10.1109/ICIPRM.2010.5515914

RT 
T1 <cTitle>2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)</cTitle>: T1 <Title>III-V MOSFETs: Scaling laws, scaling limits, fabrication processes</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-5515914&Exemplar=1&LAN=DE
				
A1 Rodwell, M. J. W.
A1 Shin, B.
A1 Lee, Yong-ju
A1 Steiger, S.
A1 Lee, S.
A1 Ryu, H.
A1 Tan, Y.
A1 Hegde, G.
A1 Wang, L.
A1 Chagarov, E.
A1 Gossard, A. C.
A1 Singisetti, U.
A1 Frensley, W.
A1 Kummel, A.
A1 Palmstrom, C.
A1 McIntyre, Paul C
A1 Boykin, T.
A1 Klimek, G.
A1 Asbeck, P.
A1 Wistey, M.
A1 Burek, G. J.
A1 Carter, A.
A1 Baraskar, A.
A1 Law, J.
A1 Thibeault, B. J.
A1 Kim, Eun Ji
YR 2010
SN 1092-8669
SN 1092-8669
K1 III-V semiconductor materials
K1 MOSFETs
K1 Fabrication
K1 Very large scale integration
K1 FETs
K1 Low voltage
K1 Circuits
K1 Cutoff frequency
K1 Conductivity
K1 Transconductance
SP 1
OP 6
LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2010.5515914
DO https://doi.org/10.1109/ICIPRM.2010.5515914
SF ELIB - SuUB Bremen

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