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Fabrication of AlGaN/GaN HEMT with the improved ohmic conta..:
, In:
2010 IEEE MTT-S International Microwave Symposium
,
Heo, Jong-Gon
;
Sung, Ho-Kun
;
Lim, Jong-Won
... - p. 1-1 , 2010
Link:
https://doi.org/10.1109/MWSYM.2010.5517087
RT T1
2010 IEEE MTT-S International Microwave Symposium
: T1
Fabrication of AlGaN/GaN HEMT with the improved ohmic contact by encapsulation of silicon dioxide thin film
UL https://suche.suub.uni-bremen.de/peid=ieee-5517087&Exemplar=1&LAN=DE A1 Heo, Jong-Gon A1 Sung, Ho-Kun A1 Lim, Jong-Won A1 Kim, Shin-Keun A1 Park, Won-Kyu A1 Ko, Chul-Gi YR 2010 SN 0149-645X SN 0149-645X SN 0149-645X K1 Fabrication K1 Aluminum gallium nitride K1 Gallium nitride K1 HEMTs K1 Ohmic contacts K1 Encapsulation K1 Silicon compounds K1 Semiconductor thin films K1 Surface resistance K1 Contact resistance SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/MWSYM.2010.5517087 DO https://doi.org/10.1109/MWSYM.2010.5517087 SF ELIB - SuUB Bremen
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