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1 Ergebnisse
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The impact of uniaxial strain on low frequency noise of nan..:
, In:
2010 IEEE MTT-S International Microwave Symposium
,
Yeh, Kuo-Liang
;
Hong, Wei-Lun
;
Guo, Jyh-Chyurn
- p. 1-1 , 2010
Link:
https://doi.org/10.1109/MWSYM.2010.5517095
RT T1
2010 IEEE MTT-S International Microwave Symposium
: T1
The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain
UL https://suche.suub.uni-bremen.de/peid=ieee-5517095&Exemplar=1&LAN=DE A1 Yeh, Kuo-Liang A1 Hong, Wei-Lun A1 Guo, Jyh-Chyurn YR 2010 SN 0149-645X SN 0149-645X SN 0149-645X K1 Uniaxial strain K1 Low-frequency noise K1 MOSFETs K1 Silicon germanium K1 Germanium silicon alloys K1 Circuits K1 III-V semiconductor materials K1 Nanoscale devices K1 Leakage current K1 Fluctuations SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/MWSYM.2010.5517095 DO https://doi.org/10.1109/MWSYM.2010.5517095 SF ELIB - SuUB Bremen
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