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Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD:
, In:
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser TechnologyOptoelectronics Technology (ASOT)
,
Wang, Yong
;
Yu, Naisen
;
Deng, Dongmei
... - p. 68-71 , 2010
Link:
https://doi.org/10.1109/RCSLPLT.2010.5615348
RT T1 <cTitle>2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser TechnologyOptoelectronics Technology (ASOT)</cTitle>: T1 <Title>Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-5615348&Exemplar=1&LAN=DE A1 Wang, Yong A1 Yu, Naisen A1 Deng, Dongmei A1 Li, Ming A1 Sun, Fei A1 Lau, Kei May YR 2010 K1 Gallium nitride K1 Buffer layers K1 HEMTs K1 MODFETs K1 Aluminum gallium nitride K1 Substrates K1 Silicon K1 AlGaN/GaN HEMT K1 Si substrate K1 MOCVD K1 Mg-doped SP 68 OP 71 LK http://dx.doi.org/https://doi.org/10.1109/RCSLPLT.2010.5615348 DO https://doi.org/10.1109/RCSLPLT.2010.5615348 SF ELIB - SuUB Bremen
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