Titel

Merkliste
1 Ergebnisse

High performance 22/20nm FinFET CMOS devices with advanced ..:

, In: 2010 International Electron Devices Meeting,

Wu, C.C. ; Cheng, M.L. ; Li, T.H.... - p. 27.1.1-27.1.4 , 2010

Link: https://doi.org/10.1109/IEDM.2010.5703430

RT 
T1 <cTitle>2010 International Electron Devices Meeting</cTitle>: T1 <Title>High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-5703430&Exemplar=1&LAN=DE
				
A1 Wu, C.C.
A1 Cheng, M.L.
A1 Li, T.H.
A1 Lin, Y.C.
A1 Yang, L.Y.
A1 Lin, C.P.
A1 Hou, C.S.
A1 Lin, H.C.
A1 Yang, J.L.
A1 Yu, K.F.
A1 Chen, M.J.
A1 Lin, D.W.
A1 Hsieh, T.H.
A1 Peng, Y.C.
A1 Chou, C.H.
A1 Lee, C.J.
A1 Huang, C.W.
A1 Lu, C.Y.
A1 Yang, F.K.
A1 Chen, H.K.
A1 Weng, L.W.
A1 Yen, P.C.
A1 Keshavarzi, A.
A1 Wang, S.H.
A1 Chang, S.W.
A1 Chuang, S.W.
A1 Gan, T.C.
A1 Wu, T.L.
A1 Lee, T.Y.
A1 Huang, W.S.
A1 Huang, Y.J.
A1 Tseng, Y.W.
A1 Wu, C.M.
A1 Huang, C.H.
A1 Ou-Yang, Eric
A1 Hsu, K.Y.
A1 Lin, L.T.
A1 Wang, S.B.
A1 Kwok, T.M.
A1 Su, C.C.
A1 Tsai, C.H.
A1 Huang, M.J.
A1 Lin, H.M.
A1 Chang, A.S.
A1 Chan, C.T.
A1 Liao, S.H.
A1 Chen, L.S.
A1 Chen, J.H.
A1 Lim, P.S.
A1 Yu, X.F.
A1 Ku, S.Y.
A1 Lee, Y.B.
A1 Hsieh, P.C.
A1 Wang, P.W.
A1 Chiu, Y.H.
A1 Tseng, C.H.
A1 Lin, S.S.
A1 Tao, H.J.
A1 Cao, M.
A1 Mii, Y.J.
A1 Chen, C.L.
A1 Hsieh, C.Y.
A1 Wong, K.Y.
YR 2010
SN 2156-017X
SN 0163-1918
SN 0163-1918
K1 FinFETs
K1 Logic gates
K1 Performance evaluation
K1 Random access memory
K1 Metals
K1 Reliability
K1 Strain
SP 27.1.1
OP 27.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2010.5703430
DO https://doi.org/10.1109/IEDM.2010.5703430
SF ELIB - SuUB Bremen

Export

RefWorks (nur Desktop-Version!)
Flow (Zuerst in Flow einloggen, dann importieren)