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Gain estimation of RT-APD devices by means of TCAD numerica..:
, In:
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
,
Cortes, I.
;
Fernandez-Martinez, P.
;
Flores, D.
.. - p. 1-4 , 2011
Link:
https://doi.org/10.1109/SCED.2011.5744152
RT T1
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
: T1
Gain estimation of RT-APD devices by means of TCAD numerical simulations
UL https://suche.suub.uni-bremen.de/peid=ieee-5744152&Exemplar=1&LAN=DE A1 Cortes, I. A1 Fernandez-Martinez, P. A1 Flores, D. A1 Hidalgo, S. A1 Rebollo, J. YR 2011 SN 2163-4971 K1 Junctions K1 Semiconductor process modeling K1 Electric fields K1 Doping K1 Silicon K1 Substrates K1 Anodes K1 Reach-Through Avalanche Photodiode (RT-APD) K1 TCAD simulations K1 gain K1 breakdown voltage K1 reach-through voltage K1 linearity SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SCED.2011.5744152 DO https://doi.org/10.1109/SCED.2011.5744152 SF ELIB - SuUB Bremen
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