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Properties of PZT thin films as a function of in-plane biax..:
, In:
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics
,
Shepard, J.F.
;
Trolier-McKinstry, S.
;
Hendrickson, M.A.
. - p. 161,162,163,164,165 , 1996
Link:
https://doi.org/10.1109/ISAF.1996.602728
RT T1
ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics
: T1
Properties of PZT thin films as a function of in-plane biaxial stress
UL https://suche.suub.uni-bremen.de/peid=ieee-602728&Exemplar=1&LAN=DE A1 Shepard, J.F. A1 Trolier-McKinstry, S. A1 Hendrickson, M.A. A1 Zeto, R. YR 1996 K1 Transistors K1 Tensile stress K1 Compressive stress K1 Stress measurement K1 Testing K1 Capacitors K1 Residual stresses K1 Electrodes K1 Titanium compounds K1 Semiconductor films SP 161,162,163,164,165 LK http://dx.doi.org/https://doi.org/10.1109/ISAF.1996.602728 DO https://doi.org/10.1109/ISAF.1996.602728 SF ELIB - SuUB Bremen
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