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Impact of proton irradiation on strained triple gate SOI p-..:
, In:
2011 12th European Conference on Radiation and Its Effects on Components and Systems
,
Agopian, P. G. D.
;
Martino, J. A.
;
Kobayashi, D.
.. - p. 7-10 , 2011
Link:
https://doi.org/10.1109/RADECS.2011.6131291
RT T1
2011 12th European Conference on Radiation and Its Effects on Components and Systems
: T1
Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-6131291&Exemplar=1&LAN=DE A1 Agopian, P. G. D. A1 Martino, J. A. A1 Kobayashi, D. A1 Simoen, E. A1 Claeys, C. YR 2011 SN 0379-6566 SN 0379-6566 K1 MOS devices K1 Logic gates K1 Protons K1 Stress K1 Radiation effects K1 Threshold voltage K1 Silicon K1 proton-irradiation K1 triple-gate K1 strained silicon SP 7 OP 10 LK http://dx.doi.org/https://doi.org/10.1109/RADECS.2011.6131291 DO https://doi.org/10.1109/RADECS.2011.6131291 SF ELIB - SuUB Bremen
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