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1 Ergebnisse
1
Tribological, thermal, and kinetic attributes of 300 vs. 45..:
, In:
2012 SEMI Advanced Semiconductor Manufacturing Conference
,
Jiao, Yubo
;
Liao, Xiaoyan
;
Wu, Changhong
... - p. 272-277 , 2012
Link:
https://doi.org/10.1109/ASMC.2012.6212910
RT T1
2012 SEMI Advanced Semiconductor Manufacturing Conference
: T1
Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes
UL https://suche.suub.uni-bremen.de/peid=ieee-6212910&Exemplar=1&LAN=DE A1 Jiao, Yubo A1 Liao, Xiaoyan A1 Wu, Changhong A1 Zhuang, Yun A1 Sampurno, Yasa A1 Philipossian, Ara A1 Theng, Siannie A1 Goldstein, Michael YR 2012 SN 2376-6697 SN 1078-8743 K1 Copper K1 Semiconductor device modeling K1 Slurries K1 Surface treatment K1 Mathematical model K1 Heating K1 Force K1 chemical mechanical planarization K1 300 vs. 450 mm K1 coefficient of friction K1 wafer surface reaction temperature K1 removal rate SP 272 OP 277 LK http://dx.doi.org/https://doi.org/10.1109/ASMC.2012.6212910 DO https://doi.org/10.1109/ASMC.2012.6212910 SF ELIB - SuUB Bremen
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