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Impact of buffer composition on the dynamic on-state resist..:
, In:
2012 24th International Symposium on Power Semiconductor Devices and ICs
,
Hilt, Oliver
;
Bahat-Treidel, Eldad
;
Cho, Eunjung
.. - p. 345-348 , 2012
Link:
https://doi.org/10.1109/ISPSD.2012.6229092
RT T1 <cTitle>2012 24th International Symposium on Power Semiconductor Devices and ICs</cTitle>: T1 <Title>Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6229092&Exemplar=1&LAN=DE A1 Hilt, Oliver A1 Bahat-Treidel, Eldad A1 Cho, Eunjung A1 Singwald, Sebastian A1 Wurfl, Joachim YR 2012 SN 1946-0201 SN 1063-6854 SN 1943-653X K1 Logic gates K1 Aluminum gallium nitride K1 Switches K1 Gallium nitride K1 HEMTs K1 MODFETs K1 GaN K1 normally off K1 dynamic on-state resistance K1 dispersion K1 switching SP 345 OP 348 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2012.6229092 DO https://doi.org/10.1109/ISPSD.2012.6229092 SF ELIB - SuUB Bremen
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