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0.18 µm BCD technology platform with best-in-class 6 V to 7..:

, In: 2012 24th International Symposium on Power Semiconductor Devices and ICs,
Chou, Hsueh-Liang ; Su, P. C. ; Ng, J. C. W.... - p. 401-404 , 2012
Link: https://doi.org/10.1109/ISPSD.2012.6229106