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1 Ergebnisse
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Carbon-doped Ge2Sb2Te5 phase-change memory devices featurin..:
, In:
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
,
Hubert, Q.
;
Jahan, C.
;
Toffoli, A.
... - p. 286-289 , 2012
Link:
https://doi.org/10.1109/ESSDERC.2012.6343389
RT T1 <cTitle>2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)</cTitle>: T1 <Title>Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6343389&Exemplar=1&LAN=DE A1 Hubert, Q. A1 Jahan, C. A1 Toffoli, A. A1 Navarro, G. A1 Chandrashekar, S. A1 Noe, P. A1 Sousa, V. A1 Perniola, L. A1 Nodin, J.-F. A1 Persico, A. A1 Maitrejean, S. A1 Roule, A. A1 Henaff, E. A1 Tessaire, M. A1 Zuliani, P. A1 Annunziata, R. A1 Reimbold, G. A1 Pananakakis, G. A1 De Salvo, B. YR 2012 SN 2378-6558 SN 1930-8876 SN 1930-8876 K1 Phase change materials K1 Carbon K1 Resistance K1 Phase change memory K1 Crystallization K1 Temperature measurement SP 286 OP 289 LK http://dx.doi.org/https://doi.org/10.1109/ESSDERC.2012.6343389 DO https://doi.org/10.1109/ESSDERC.2012.6343389 SF ELIB - SuUB Bremen
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