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Novel gate-recessed vertical InAs/GaSb TFETs with record hi..:

, In: 2012 International Electron Devices Meeting,
Zhou, Guangle ; Kosel, T. ; Wistey, M.... - p. 32.6.1-32.6.4 , 2012
Link: https://doi.org/10.1109/IEDM.2012.6479154