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Hole mobility improvement in silicon-on-insulator and bulk ..:

, In: International Electron Devices Meeting. IEDM Technical Digest,
Tiwari, S. ; Fischetti, M.V. ; Mooney, P.M.. - p. 939,940,941 , 1997
Link: https://doi.org/10.1109/IEDM.1997.650537