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1 Ergebnisse
1
New Hot Carrier degradation modeling reconsidering the role..:
, In:
2013 IEEE International Reliability Physics Symposium (IRPS)
,
Randriamihaja, Y. Mamy
;
Federspiel, X.
;
Huard, V.
.. - p. XT.1.1-XT.1.5 , 2013
Link:
https://doi.org/10.1109/IRPS.2013.6532116
RT T1
2013 IEEE International Reliability Physics Symposium (IRPS)
: T1
New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs
UL https://suche.suub.uni-bremen.de/peid=ieee-6532116&Exemplar=1&LAN=DE A1 Randriamihaja, Y. Mamy A1 Federspiel, X. A1 Huard, V. A1 Bravaix, A. A1 Palestri, P. YR 2013 SN 1938-1891 SN 1541-7026 SN 1541-7026 K1 Degradation K1 Stress K1 Microscopy K1 Equations K1 Mathematical model K1 Hot carriers K1 MOSFET K1 HCS K1 interface defects K1 degradation modeling SP XT.1.1 OP XT.1.5 LK http://dx.doi.org/https://doi.org/10.1109/IRPS.2013.6532116 DO https://doi.org/10.1109/IRPS.2013.6532116 SF ELIB - SuUB Bremen
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