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1
Dependency of NAND flash memory cells on random dopant fluc..:
, In:
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings
,
Kang, Jun Geun
;
Han, Boram
;
Han, Kyoung-Rok
... - p. 37-40 , 2012
Link:
https://doi.org/10.1109/NVMTS.2013.6632858
RT T1
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings
: T1
Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects
UL https://suche.suub.uni-bremen.de/peid=ieee-6632858&Exemplar=1&LAN=DE A1 Kang, Jun Geun A1 Han, Boram A1 Han, Kyoung-Rok A1 Chung, Sung Jae A1 Cho, Gyu-Seog A1 Park, Sung-Kye A1 Choi, Woo Young YR 2012 K1 Resource description framework K1 Flash memories K1 Doping K1 Threshold voltage K1 MOSFET K1 Logic gates K1 CMOS integrated circuits K1 random dopant fluctuation (RDF) K1 NAND flash memory cell K1 threshold voltage SP 37 OP 40 LK http://dx.doi.org/https://doi.org/10.1109/NVMTS.2013.6632858 DO https://doi.org/10.1109/NVMTS.2013.6632858 SF ELIB - SuUB Bremen
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