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1 Ergebnisse
1
MRAM concepts for sub-nanosecond precessional switching and..:
, In:
2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)
,
Sousa, R.C.
;
Prejbeanu, I. L.
;
Vila, L.
... - p. 1-3 , 2013
Link:
https://doi.org/10.1109/ISCDG.2013.6656316
RT T1 <cTitle>2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)</cTitle>: T1 <Title>MRAM concepts for sub-nanosecond precessional switching and sub-20nm cell scaling</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6656316&Exemplar=1&LAN=DE A1 Sousa, R.C. A1 Prejbeanu, I. L. A1 Vila, L. A1 Rodmacq, B. A1 Dieny, B. A1 Bandiera, S. A1 Marins de Castro, M. A1 Lacoste, B. A1 San-Emeterio-Alvarez, L. A1 Nistor, L. A1 Auffret, S. A1 Ebels, U. A1 Ducruet, C. YR 2013 K1 Switches K1 Magnetic resonance imaging K1 Current measurement K1 Thermal stability K1 Rotation measurement K1 Random access memory K1 CMOS integrated circuits K1 precessional switching K1 perpendicular polarizer K1 MRAM K1 spin transfer torque K1 perpendicular anisotropy SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/ISCDG.2013.6656316 DO https://doi.org/10.1109/ISCDG.2013.6656316 SF ELIB - SuUB Bremen
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