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1 Ergebnisse
1
Incomplete ionization and carrier mobility in compensated p..:
, In:
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2
,
Forster, M.
;
Rougieux, F. E.
;
Cuevas, A.
... - p. 1-6 , 2012
Link:
https://doi.org/10.1109/PVSC-Vol2.2012.6656739
RT T1 <cTitle>2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2</cTitle>: T1 <Title>Incomplete ionization and carrier mobility in compensated p-type and n-type silicon</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6656739&Exemplar=1&LAN=DE A1 Forster, M. A1 Rougieux, F. E. A1 Cuevas, A. A1 Dehestru, B. A1 Thomas, A. A1 Fourmond, E. A1 Lemiti, M. YR 2012 K1 Silicon K1 Doping K1 Scattering K1 Ionization K1 Charge carrier density K1 Temperature measurement K1 Semiconductor process modeling K1 Boron K1 carrier mobility K1 compensated silicon K1 gallium K1 ionization of dopant K1 phosphorus K1 scattering SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/PVSC-Vol2.2012.6656739 DO https://doi.org/10.1109/PVSC-Vol2.2012.6656739 SF ELIB - SuUB Bremen
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