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New reverse-conducting IGBT (1200V) with revolutionary comp..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Takahashi, K. ; Yoshida, S. ; Noguchi, S.... - p. 131-134 , 2014
Link: https://doi.org/10.1109/ISPSD.2014.6855993