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1 Ergebnisse
1
New reverse-conducting IGBT (1200V) with revolutionary comp..:
, In:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
,
Takahashi, K.
;
Yoshida, S.
;
Noguchi, S.
... - p. 131-134 , 2014
Link:
https://doi.org/10.1109/ISPSD.2014.6855993
RT T1
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
: T1
New reverse-conducting IGBT (1200V) with revolutionary compact package
UL https://suche.suub.uni-bremen.de/peid=ieee-6855993&Exemplar=1&LAN=DE A1 Takahashi, K. A1 Yoshida, S. A1 Noguchi, S. A1 Kuribayashi, H. A1 Nashida, N. A1 Kobayashi, Y. A1 Kobayashi, H. A1 Mochizuki, K. A1 Ikeda, Y. A1 Ikawa, O. YR 2014 SN 1063-6854 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Inverters K1 Switches K1 Reliability K1 Resistance K1 Copper K1 Impedance SP 131 OP 134 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2014.6855993 DO https://doi.org/10.1109/ISPSD.2014.6855993 SF ELIB - SuUB Bremen
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