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1 Ergebnisse
1
Forward-voltage-tunable schottky-integrated trench MOSFETs:
, In:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
,
Chuang, Chiao-Shun Patrick
;
Chen, Kai-Yu Gary
;
Hung, Yu-Ren Ryan
.. - p. 159-162 , 2014
Link:
https://doi.org/10.1109/ISPSD.2014.6856000
RT T1 <cTitle>2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)</cTitle>: T1 <Title>Forward-voltage-tunable schottky-integrated trench MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6856000&Exemplar=1&LAN=DE A1 Chuang, Chiao-Shun Patrick A1 Chen, Kai-Yu Gary A1 Hung, Yu-Ren Ryan A1 Kuo, Ta-Chuan A1 Huang, Cheng-Chin Tony YR 2014 SN 1063-6854 SN 1946-0201 K1 MOSFET K1 Schottky diodes K1 Implants K1 Etching K1 Junctions K1 Metals K1 Schottky barriers SP 159 OP 162 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2014.6856000 DO https://doi.org/10.1109/ISPSD.2014.6856000 SF ELIB - SuUB Bremen
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