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1 Ergebnisse
1
High performance micromachined GaN on Si HEMT with backside..:
, In:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
,
Chiu, Hsien-Chin
;
Yang, Chih-Wei
;
Wang, Hsiang-Chun
. - p. 229-232 , 2014
Link:
https://doi.org/10.1109/ISPSD.2014.6856018
RT T1
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
: T1
High performance micromachined GaN on Si HEMT with backside diamondlke-carbon/titanium heat dissipation layer
UL https://suche.suub.uni-bremen.de/peid=ieee-6856018&Exemplar=1&LAN=DE A1 Chiu, Hsien-Chin A1 Yang, Chih-Wei A1 Wang, Hsiang-Chun A1 Kan, Ming-Chi YR 2014 SN 1063-6854 SN 1946-0201 K1 Silicon K1 Gallium nitride K1 Substrates K1 HEMTs K1 Heating K1 Aluminum gallium nitride K1 Logic gates SP 229 OP 232 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2014.6856018 DO https://doi.org/10.1109/ISPSD.2014.6856018 SF ELIB - SuUB Bremen
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