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1 Ergebnisse
1
High voltage AlGaN/GaN HFET employing low taper angle field..:
, In:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
,
Ji, In-Hwan
;
Lee, Bongmook
;
Wang, Sizhen
... - p. 269-272 , 2014
Link:
https://doi.org/10.1109/ISPSD.2014.6856028
RT T1
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
: T1
High voltage AlGaN/GaN HFET employing low taper angle field-plate for stable forward blocking capability
UL https://suche.suub.uni-bremen.de/peid=ieee-6856028&Exemplar=1&LAN=DE A1 Ji, In-Hwan A1 Lee, Bongmook A1 Wang, Sizhen A1 Misra, Veena A1 Huang, Alex Q. A1 Choi, Young-Hwan YR 2014 SN 1063-6854 SN 1946-0201 K1 Gallium nitride K1 Leakage currents K1 Logic gates K1 HEMTs K1 MODFETs K1 Aluminum gallium nitride K1 Current measurement K1 GaN K1 HEFTs K1 Field plate K1 Taper SP 269 OP 272 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2014.6856028 DO https://doi.org/10.1109/ISPSD.2014.6856028 SF ELIB - SuUB Bremen
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