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22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity mod..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Brunt, E. V. ; Allen, S. T. ; Burk, A. A.... - p. 358-361 , 2014
Link: https://doi.org/10.1109/ISPSD.2014.6856050