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1
The effects of growth parameters on the electrical properti..:
, In:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)
,
Huang, Wei-Ching
;
Wong, Yuen-Yee
;
Liu, Kuan-Shin
.. - p. 499-501 , 2014
Link:
https://doi.org/10.1109/SMELEC.2014.6920907
RT T1 <cTitle>2014 IEEE International Conference on Semiconductor Electronics (ICSE2014)</cTitle>: T1 <Title>The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs)</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-6920907&Exemplar=1&LAN=DE A1 Huang, Wei-Ching A1 Wong, Yuen-Yee A1 Liu, Kuan-Shin A1 Hsieh, Chi-Feng A1 Chang, Edward Yi YR 2014 K1 III-V semiconductor materials K1 HEMTs K1 MODFETs K1 Gallium nitride K1 Electron mobility K1 Temperature measurement K1 Scattering K1 InAlN K1 GaN K1 styling SP 499 OP 501 LK http://dx.doi.org/https://doi.org/10.1109/SMELEC.2014.6920907 DO https://doi.org/10.1109/SMELEC.2014.6920907 SF ELIB - SuUB Bremen
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