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A selective gate recess process utilizing MBE-grown In/sub ..:
, In:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)
,
Hanson, A.W.
;
Danzilio, D.
;
Bacher, K.
. - p. 195,196,197 , 1998
Link:
https://doi.org/10.1109/GAAS.1998.722668
RT T1
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)
: T1
A selective gate recess process utilizing MBE-grown In/sub 0.5/Ga/sub 0.5/P etch-stop layers for GaAs-based FET technologies
UL https://suche.suub.uni-bremen.de/peid=ieee-722668&Exemplar=1&LAN=DE A1 Hanson, A.W. A1 Danzilio, D. A1 Bacher, K. A1 Leung, L. YR 1998 SN 1064-7775 K1 Etching K1 Molecular beam epitaxial growth K1 FETs K1 Chemistry K1 Gallium arsenide K1 Voltage K1 Epitaxial growth K1 Reproducibility of results K1 Contact resistance K1 Degradation SP 195,196,197 LK http://dx.doi.org/https://doi.org/10.1109/GAAS.1998.722668 DO https://doi.org/10.1109/GAAS.1998.722668 SF ELIB - SuUB Bremen
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