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The Ka-band based study on the optimised bias current densi..:
, In:
2014 International Conference on Advances in Communication and Computing Technologies (ICACACT 2014)
,
Banerjee, Soumen
;
Mukherjee, Piyali
;
Mukherjee, Subhodeep
. - p. 1-6 , 2014
Link:
https://doi.org/10.1109/EIC.2015.7230744
RT T1 <cTitle>2014 International Conference on Advances in Communication and Computing Technologies (ICACACT 2014)</cTitle>: T1 <Title>The Ka-band based study on the optimised bias current density performance of cubic wide band gap semiconductor impatts and its comparison with silicon counterpart</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7230744&Exemplar=1&LAN=DE A1 Banerjee, Soumen A1 Mukherjee, Piyali A1 Mukherjee, Subhodeep A1 Sinha, Shruti YR 2014 K1 Silicon K1 Current density K1 Gallium nitride K1 Power generation K1 Electric fields K1 Wide band gap semiconductors K1 Ionization K1 Cubic 3C-SiC K1 cubic ZnB-GaN K1 Double drift impatt diode K1 millimetre wave K1 optimised bias current density K1 wide band gap semiconductor SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/EIC.2015.7230744 DO https://doi.org/10.1109/EIC.2015.7230744 SF ELIB - SuUB Bremen
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