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1 Ergebnisse
1
RF performance of 28nm PolySiON and HKMG CMOS devices:
, In:
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
,
Chew, Kok Wai Johnny
;
Agshikar, Aniket
;
Wiatr, Maciej
... - p. 43-46 , 2015
Link:
https://doi.org/10.1109/RFIC.2015.7337700
RT T1 <cTitle>2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)</cTitle>: T1 <Title>RF performance of 28nm PolySiON and HKMG CMOS devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7337700&Exemplar=1&LAN=DE A1 Chew, Kok Wai Johnny A1 Agshikar, Aniket A1 Wiatr, Maciej A1 Wong, Jen Shuang A1 Chow, Wai Heng A1 Liu, Zhihong A1 Lee, Ting Huang A1 Shi, Jinglin A1 Lim, Suh Fei A1 Sundaram, Kumaran A1 Chan, Lye Hock Kelvin A1 Cheng, Chye Huat Michael A1 Sassiat, Nicolas A1 Yoo, Yong Koo A1 Balijepalli, Asha A1 Kumta, Amit A1 Nguyen, Chi Dong A1 Illgen, Ralf A1 Mathew, Arun A1 Schippel, Christian A1 Romanescu, Alexandru A1 Watts, Josef A1 Harame, David YR 2015 K1 Logic gates K1 Radio frequency K1 Q-factor K1 MOS devices K1 Solids K1 Capacitance K1 Transistors K1 CMOS High-K metal gate K1 PolySiON K1 RF K1 28nm SP 43 OP 46 LK http://dx.doi.org/https://doi.org/10.1109/RFIC.2015.7337700 DO https://doi.org/10.1109/RFIC.2015.7337700 SF ELIB - SuUB Bremen
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