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Formation and characterization of III-V native oxides for o..:
, In:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243)
,
Dupuis, R.D.
;
Heller, R.D.
;
Jae-Hyun Ryou
... - p. 238,239 , 1998
Link:
https://doi.org/10.1109/LEOS.1998.739547
RT T1 <cTitle>Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243)</cTitle>: T1 <Title>Formation and characterization of III-V native oxides for optoelectronic applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-739547&Exemplar=1&LAN=DE A1 Dupuis, R.D. A1 Heller, R.D. A1 Jae-Hyun Ryou A1 Chowdhury, U. A1 Curtis, A.P. A1 Stillman, G.E. A1 Mathes, R.T. A1 Hull, R. YR 1998 K1 III-V semiconductor materials K1 Oxidation K1 Gallium arsenide K1 Microelectronics K1 Photoluminescence K1 Optical microscopy K1 Radiative recombination K1 Vertical cavity surface emitting lasers K1 Temperature K1 Materials science and technology SP 238,239 LK http://dx.doi.org/https://doi.org/10.1109/LEOS.1998.739547 DO https://doi.org/10.1109/LEOS.1998.739547 SF ELIB - SuUB Bremen
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