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1 Ergebnisse
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Study of SiO2 thickness effect on insertion loss of CMOS 60..:
, In:
2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)
,
Mahmoud, Nessim
;
Barakat, Adel
;
Abd El-Hameed, Anwer S.
... - p. 237-239 , 2015
Link:
https://doi.org/10.1109/ICECS.2015.7440292
RT T1
2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS)
: T1
Study of SiO2 thickness effect on insertion loss of CMOS 60 GHz band pass filter
UL https://suche.suub.uni-bremen.de/peid=ieee-7440292&Exemplar=1&LAN=DE A1 Mahmoud, Nessim A1 Barakat, Adel A1 Abd El-Hameed, Anwer S. A1 Abdel-Rahman, Adel B. A1 Allam, Ahmed A1 Pokharel, Ramesh K. YR 2015 K1 Band-pass filters K1 Insertion loss K1 CMOS integrated circuits K1 Integrated circuit modeling K1 CMOS technology K1 Resonator filters K1 Semiconductor device modeling K1 Millimeter wave K1 Bandpass K1 CMOS K1 Open loop Resonators SP 237 OP 239 LK http://dx.doi.org/https://doi.org/10.1109/ICECS.2015.7440292 DO https://doi.org/10.1109/ICECS.2015.7440292 SF ELIB - SuUB Bremen
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