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The regularities of radiation defect formation at the inter..:
, In:
2016 International Siberian Conference on Control and Communications (SIBCON)
,
Soboleva, E. G.
;
Litvinenko, V. V.
;
Krit, T. B.
- p. 1-4 , 2016
Link:
https://doi.org/10.1109/SIBCON.2016.7491677
RT T1
2016 International Siberian Conference on Control and Communications (SIBCON)
: T1
The regularities of radiation defect formation at the interface metal -n-InP
UL https://suche.suub.uni-bremen.de/peid=ieee-7491677&Exemplar=1&LAN=DE A1 Soboleva, E. G. A1 Litvinenko, V. V. A1 Krit, T. B. YR 2016 SN 2380-6516 K1 Thyristors K1 Radiation effects K1 Indium phosphide K1 Temperature dependence K1 Process control K1 Mathematical model K1 III-V semiconductor materials K1 InP K1 DLTS spectr K1 Schottky barrier K1 radiation defect SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SIBCON.2016.7491677 DO https://doi.org/10.1109/SIBCON.2016.7491677 SF ELIB - SuUB Bremen
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