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1 Ergebnisse
1
A low loss IGBT with shallow p-well to adjust the carrier p..:
, In:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yang, Zhuo
;
Sun, Weifeng
;
Zhu, Jing
... - p. 327-330 , 2016
Link:
https://doi.org/10.1109/ISPSD.2016.7520844
RT T1
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
A low loss IGBT with shallow p-well to adjust the carrier profiles at the emitter side
UL https://suche.suub.uni-bremen.de/peid=ieee-7520844&Exemplar=1&LAN=DE A1 Yang, Zhuo A1 Sun, Weifeng A1 Zhu, Jing A1 Zhou, Jingcheng A1 Zhu, Yuanzheng A1 Ye, Peng A1 Li, Zongqing YR 2016 SN 1946-0201 K1 Logic gates K1 Insulated gate bipolar transistors K1 Power semiconductor devices K1 Integrated circuits K1 Three-dimensional displays K1 Switches K1 Charge carrier density K1 IGBT K1 Low loss K1 self-adjust carriers profile K1 shallow P-well SP 327 OP 330 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2016.7520844 DO https://doi.org/10.1109/ISPSD.2016.7520844 SF ELIB - SuUB Bremen
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