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Improvement of m-plane ZnO films formed on buffer layers on..:
, In:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
,
Tanoue, Hironobu
;
Yamashita, Tatsuya
;
Wada, Shohei
... - p. 1-1 , 2016
Link:
https://doi.org/10.1109/ICIPRM.2016.7528689
RT T1 <cTitle>2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)</cTitle>: T1 <Title>Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7528689&Exemplar=1&LAN=DE A1 Tanoue, Hironobu A1 Yamashita, Tatsuya A1 Wada, Shohei A1 Yatabe, Zenji A1 Nagaoka, Shoji A1 Nakamura, Yusui YR 2016 K1 Zinc oxide K1 II-VI semiconductor materials K1 Buffer layers K1 Crystals K1 Substrates K1 Compounds SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2016.7528689 DO https://doi.org/10.1109/ICIPRM.2016.7528689 SF ELIB - SuUB Bremen
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