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Scalability of zinc oxide thin-film transistors for RF ampl..:
, In:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
,
Jessen, Gregg Huascar
;
Schuette, Michael
;
Leedy, Kevin
... - p. 1-1 , 2016
Link:
https://doi.org/10.1109/ICIPRM.2016.7528797
RT T1
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
: T1
Scalability of zinc oxide thin-film transistors for RF amplifiers and DC switch applications
UL https://suche.suub.uni-bremen.de/peid=ieee-7528797&Exemplar=1&LAN=DE A1 Jessen, Gregg Huascar A1 Schuette, Michael A1 Leedy, Kevin A1 Crespo, Antonio A1 Donigan, Thomas A1 Green, Andrew A1 Walker, Dennis A1 Tetlak, Stephen A1 Sutherlin, Karynn YR 2016 K1 Scalability K1 Radio frequency K1 Switching circuits K1 Zinc oxide K1 Thin film transistors K1 Logic gates SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2016.7528797 DO https://doi.org/10.1109/ICIPRM.2016.7528797 SF ELIB - SuUB Bremen
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