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1 Ergebnisse
1
High temperature dielectric properties of SiO2 films deposi..:
, In:
2016 IEEE International Conference on Dielectrics (ICD)
,
Lumei Wei
;
Locatelli, Marie-Laure
;
Diaham, Sombel
... - p. 1061-1064 , 2016
Link:
https://doi.org/10.1109/ICD.2016.7547801
RT T1
2016 IEEE International Conference on Dielectrics (ICD)
: T1
High temperature dielectric properties of SiO2 films deposited by TEOS PECVD
UL https://suche.suub.uni-bremen.de/peid=ieee-7547801&Exemplar=1&LAN=DE A1 Lumei Wei A1 Locatelli, Marie-Laure A1 Diaham, Sombel A1 Pham, Cong Duc A1 Grosset, Gregory A1 Dupuy, Lionel YR 2016 K1 Films K1 Annealing K1 Temperature measurement K1 Dielectric breakdown K1 Plasma temperature K1 Temperature K1 Dielectric measurement K1 SiO2 K1 TEOS-PECVD K1 passivation K1 high temperature K1 dielectric strength SP 1061 OP 1064 LK http://dx.doi.org/https://doi.org/10.1109/ICD.2016.7547801 DO https://doi.org/10.1109/ICD.2016.7547801 SF ELIB - SuUB Bremen
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