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1 Ergebnisse
1
Hot-carrier analysis on nMOS Si FinFETs with solid source d..:
, In:
2016 IEEE International Reliability Physics Symposium (IRPS)
,
Chasin, Adrian
;
Franco, Jacopo
;
Ritzenthaler, Romain
... - p. 4B-4-1-4B-4-6 , 2016
Link:
https://doi.org/10.1109/IRPS.2016.7574535
RT T1
2016 IEEE International Reliability Physics Symposium (IRPS)
: T1
Hot-carrier analysis on nMOS Si FinFETs with solid source doped junction
UL https://suche.suub.uni-bremen.de/peid=ieee-7574535&Exemplar=1&LAN=DE A1 Chasin, Adrian A1 Franco, Jacopo A1 Ritzenthaler, Romain A1 Hellings, Geert A1 Cho, Moonju A1 Sasaki, Yuichiro A1 Subirats, Alexandre A1 Roussel, Philippe A1 Kaczer, Ben A1 Linten, Dimitri A1 Horiguchi, Naoto A1 Groeseneken, Guido A1 Thean, Aaron YR 2016 SN 1938-1891 K1 Stress K1 Degradation K1 FinFETs K1 Logic gates K1 Junctions K1 Reliability K1 Doping K1 BTI K1 bulk finFET K1 GIDL K1 CHC SP 4B OP 4-1-4B-4-6 LK http://dx.doi.org/https://doi.org/10.1109/IRPS.2016.7574535 DO https://doi.org/10.1109/IRPS.2016.7574535 SF ELIB - SuUB Bremen
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