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1 Ergebnisse
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Investigation of microwave assisted annealing on AP-PECVD f..:
, In:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)
,
Wu, Chien-Hung
;
Huang, Bo-Wen
;
Chang, Kow-Ming
... - p. 176-179 , 2016
Link:
https://doi.org/10.1109/NANO.2016.7751474
RT T1 <cTitle>2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)</cTitle>: T1 <Title>Investigation of microwave assisted annealing on AP-PECVD fabricated In-Ga-Zn-O thin film transistors under positive bias temperature stress</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7751474&Exemplar=1&LAN=DE A1 Wu, Chien-Hung A1 Huang, Bo-Wen A1 Chang, Kow-Ming A1 Cheng, Chia-Yao A1 Chen, Hsin-Ying A1 Lee, Yao-Jen A1 Lin, Jian-Hong A1 Hsu, Jui-Mei YR 2016 K1 Stress K1 Annealing K1 Logic gates K1 Thin film transistors K1 Adsorption K1 Hall effect K1 Charge carrier processes K1 Microwave assisted annealing (MWAA) K1 atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) K1 atmospheric pressure indium-gallium-zinc oxide thin-film transistors (AP-IGZO TFTs) K1 positive bias temperature instability (PBTI) SP 176 OP 179 LK http://dx.doi.org/https://doi.org/10.1109/NANO.2016.7751474 DO https://doi.org/10.1109/NANO.2016.7751474 SF ELIB - SuUB Bremen
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