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Doping engineering to enhance performance of a silicon carb..:
, In:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
,
Radhakrishnan, Rahul
;
MacMillan, Michael F.
;
Woodin, Richard L.
- p. 105-107 , 2016
Link:
https://doi.org/10.1109/WiPDA.2016.7799918
RT T1 <cTitle>2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)</cTitle>: T1 <Title>Doping engineering to enhance performance of a silicon carbide power device</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7799918&Exemplar=1&LAN=DE A1 Radhakrishnan, Rahul A1 MacMillan, Michael F. A1 Woodin, Richard L. YR 2016 K1 Epitaxial growth K1 Doping K1 Silicon carbide K1 Schottky diodes K1 Resistance K1 Junctions K1 Performance evaluation K1 Silicon Carbide K1 epitaxy K1 graded K1 optimization K1 resistance K1 JBS diode K1 Schottky SP 105 OP 107 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA.2016.7799918 DO https://doi.org/10.1109/WiPDA.2016.7799918 SF ELIB - SuUB Bremen
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