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1
UIS failure mechanism of SiC power MOSFETs:
, In:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
,
Fayyaz, Asad
;
Castellazzi, Alberto
;
Romano, Gianpaolo
... - p. 118-122 , 2016
Link:
https://doi.org/10.1109/WiPDA.2016.7799921
RT T1 <cTitle>2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)</cTitle>: T1 <Title>UIS failure mechanism of SiC power MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7799921&Exemplar=1&LAN=DE A1 Fayyaz, Asad A1 Castellazzi, Alberto A1 Romano, Gianpaolo A1 Riccio, Michele A1 Irace, Andrea A1 Urresti, Jesus A1 Wright, Nick YR 2016 K1 Silicon carbide K1 MOSFET K1 Avalanche breakdown K1 Silicon K1 Temperature measurement K1 Performance evaluation K1 Power electronics K1 Power MOSFET K1 Avalanche ruggedness K1 Unclamped inductive switching SP 118 OP 122 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA.2016.7799921 DO https://doi.org/10.1109/WiPDA.2016.7799921 SF ELIB - SuUB Bremen
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