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1 Ergebnisse
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Experimental characterization of enhancement mode gallium-n..:
, In:
2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
,
Colmenares, Juan
;
Foulkes, Thomas
;
Barth, Christopher
.. - p. 129-134 , 2016
Link:
https://doi.org/10.1109/WiPDA.2016.7799923
RT T1 <cTitle>2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)</cTitle>: T1 <Title>Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7799923&Exemplar=1&LAN=DE A1 Colmenares, Juan A1 Foulkes, Thomas A1 Barth, Christopher A1 Modeert, Tomas A1 Pilawa-Podgurski, Robert C. N. YR 2016 K1 Voltage measurement K1 Cryogenics K1 Gallium nitride K1 Logic gates K1 Field effect transistors K1 Switches SP 129 OP 134 LK http://dx.doi.org/https://doi.org/10.1109/WiPDA.2016.7799923 DO https://doi.org/10.1109/WiPDA.2016.7799923 SF ELIB - SuUB Bremen
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