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1 Ergebnisse
1
A numerical study of Si-TMD contact with n/p type operation..:
, In:
2016 IEEE International Electron Devices Meeting (IEDM)
,
Tang, Ying-Tsan
;
Li, Kai-Shin
;
Li, Lain-Jong
... - p. 14.3.1-14.3.4 , 2016
Link:
https://doi.org/10.1109/IEDM.2016.7838415
RT T1 <cTitle>2016 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS2 FET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7838415&Exemplar=1&LAN=DE A1 Tang, Ying-Tsan A1 Li, Kai-Shin A1 Li, Lain-Jong A1 Li, Ming-Yang A1 Lin, Chang-Hsien A1 Chen, Yi-Ju A1 Chen, Chun-Chi A1 Su, Chuan-Jung A1 Wu, Bo-Wei A1 Wu, Cheng-San A1 Chen, Min-Cheng A1 Shieh, Jia-Min A1 Yeh, Wen-Kuan A1 Su, Po-Cheng A1 Wang, Tahui A1 Yang, Fu-Liang A1 Hu, Chenming YR 2016 SN 2156-017X K1 Silicon K1 Sulfur K1 Molybdenum K1 Field effect transistors K1 Doping K1 Contact resistance K1 Schottky barriers SP 14.3.1 OP 14.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2016.7838415 DO https://doi.org/10.1109/IEDM.2016.7838415 SF ELIB - SuUB Bremen
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