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1 Ergebnisse
1
FOI FinFET with ultra-low parasitic resistance enabled by f..:
, In:
2016 IEEE International Electron Devices Meeting (IEDM)
,
Zhang, Qingzhu
;
Yin, Huaxiang
;
Luo, Jun
... - p. 17.3.1-17.3.4 , 2016
Link:
https://doi.org/10.1109/IEDM.2016.7838438
RT T1 <cTitle>2016 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7838438&Exemplar=1&LAN=DE A1 Zhang, Qingzhu A1 Yin, Huaxiang A1 Luo, Jun A1 Yang, Hong A1 Meng, Lingkuan A1 Li, Yudong A1 Wu, Zhenhua A1 Zhang, Yanbo A1 Zhang, Yongkui A1 Qin, Changliang A1 Li, Junjie A1 Gao, Jianfeng A1 Wang, Guilei A1 Xiong, Wenjuan A1 Xiang, Jinjuan A1 Zhou, Zhangyu A1 Mao, Shujian A1 Xu, Gaobo A1 Liu, Jinbiao A1 Qu, Yang A1 Yang, Tao A1 Li, Junfeng A1 Xu, Qiuxia A1 Yan, Jiang A1 Zhu, Huilong A1 Zhao, Chao A1 Ye, Tianchun YR 2016 SN 2156-017X K1 FinFETs K1 Silicides K1 Silicon K1 Silicidation K1 Junctions K1 Degradation SP 17.3.1 OP 17.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2016.7838438 DO https://doi.org/10.1109/IEDM.2016.7838438 SF ELIB - SuUB Bremen
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