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A novel tensile Si (n) and compressive SiGe (p) dual-channe..:

, In: 2016 IEEE International Electron Devices Meeting (IEDM),

Bae, Dong-il ; Bae, Geumjong ; Bhuwalka, Krishna K... - p. 28.1.1-28.1.4 , 2016

Link: https://doi.org/10.1109/IEDM.2016.7838496

RT 
T1 <cTitle>2016 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-7838496&Exemplar=1&LAN=DE
				
A1 Bae, Dong-il
A1 Bae, Geumjong
A1 Bhuwalka, Krishna K
A1 Lee, Seung-Hun
A1 Song, Myung-Geun
A1 Jeon, Taek-soo
A1 Kim, Cheol
A1 Kim, Wookje
A1 Park, Jaeyoung
A1 Kim, Sunjung
A1 Kwon, Uihui
A1 Jeon, Jongwook
A1 Nam, Kab-Jin
A1 Lee, Sangwoo
A1 Lian, Sean
A1 Seo, Kang-ill
A1 Lee, Sun-Ghil
A1 Jae Hoo Park
A1 Heo, Yeon-Cheol
A1 Rodder, Mark S.
A1 Kittl, Jorge A.
A1 Kim, Yihwan
A1 Hwang, Kihyun
A1 Kim, Dong-Won
A1 Liang, Mong-song
A1 Jung, E.S.
YR 2016
SN 2156-017X
K1 Silicon
K1 Silicon germanium
K1 Logic gates
K1 Strain
K1 Stress
K1 FinFETs
K1 Performance evaluation
SP 28.1.1
OP 28.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM.2016.7838496
DO https://doi.org/10.1109/IEDM.2016.7838496
SF ELIB - SuUB Bremen

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