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Electrical stability impact of gate oxide in channel implan..:
, In:
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
,
Idris, M. I.
;
Weng, M. H.
;
Chan, H.-K.
... - p. 1-1 , 2016
Link:
https://doi.org/10.4028/www.scientific.net/MSF.897.513
RT T1 <cTitle>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</cTitle>: T1 <Title>Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7921319&Exemplar=1&LAN=DE A1 Idris, M. I. A1 Weng, M. H. A1 Chan, H.-K. A1 Murphy, A. E. A1 Smith, D. A. A1 Young, R. A. R. A1 Ramsay, E. P. A1 Clark, D. T. A1 Wright, N. G. A1 Horsfall, A. B. YR 2016 K1 Silicon carbide K1 Performance evaluation K1 Logic gates K1 Interface states K1 Stability analysis K1 gate oxide K1 interface K1 1/f noise K1 bias-temperature instability (BTI) SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/MSF.897.513 DO https://doi.org/10.4028/www.scientific.net/MSF.897.513 SF ELIB - SuUB Bremen
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