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Impact of channel mobility improvement using boron diffusio..:
, In:
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)
,
Soler, Victor
;
Cabello, Maria
;
Berthou, Maxime
... - p. 1-1 , 2016
Link:
https://doi.org/10.4028/www.scientific.net/MSF.897.537
RT T1 <cTitle>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</cTitle>: T1 <Title>Impact of channel mobility improvement using boron diffusion on different power MOSFETs voltage classes</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7921325&Exemplar=1&LAN=DE A1 Soler, Victor A1 Cabello, Maria A1 Berthou, Maxime A1 Montserrat, Josep A1 Rebollo, Jose A1 Godignon, Philippe A1 Bianda, Enea A1 Mihaila, Andrei YR 2016 SN 1662-9752 K1 Boron K1 Silicon carbide K1 MOSFET K1 Logic gates K1 Temperature K1 Doping K1 Diffusion processes K1 Power MOSFET K1 High Voltage K1 field-effect mobility K1 temperature behavior SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/MSF.897.537 DO https://doi.org/10.4028/www.scientific.net/MSF.897.537 SF ELIB - SuUB Bremen
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