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1 Ergebnisse
1
RF-pFET in fully depleted SOI demonstrates 420 GHz FT:
, In:
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
,
Watts, Josef
;
Sundaram, Kumaran
;
Johnny Chew, Kok Wai
... - p. 84-87 , 2017
Link:
https://doi.org/10.1109/RFIC.2017.7969023
RT T1 <cTitle>2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)</cTitle>: T1 <Title>RF-pFET in fully depleted SOI demonstrates 420 GHz FT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7969023&Exemplar=1&LAN=DE A1 Watts, Josef A1 Sundaram, Kumaran A1 Johnny Chew, Kok Wai A1 Lehmann, Steffen A1 Ong, Shih Ni A1 Chow, Wai Heng A1 Chan, Lye Hock A1 Mazurier, Jerome A1 Schwan, Christoph A1 Andee, Yogadissen A1 Feudel, Thomas A1 Pirro, Luca A1 Erben, Elke A1 Nowak, Edward A1 Smith, Elliot A1 Bazizi, El Mehdi A1 Kammler, Thorsten A1 Taylor, Richard A1 Rice, Bryan A1 Harame, David YR 2017 SN 2375-0995 K1 Logic gates K1 Layout K1 Radio frequency K1 Silicon-on-insulator K1 Capacitance K1 Metals K1 Wiring K1 CMOS K1 High-K metal gate K1 RF K1 cSiGe K1 SOI SP 84 OP 87 LK http://dx.doi.org/https://doi.org/10.1109/RFIC.2017.7969023 DO https://doi.org/10.1109/RFIC.2017.7969023 SF ELIB - SuUB Bremen
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