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Enhanced voltage silicon NFET-MESFET cascode amplifiers int..:
, In:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
,
Mehr, P. H.
;
Lepkowski, W.
;
Zhang, X.
... - p. 342-345 , 2017
Link:
https://doi.org/10.1109/ASMC.2017.7969257
RT T1 <cTitle>2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)</cTitle>: T1 <Title>Enhanced voltage silicon NFET-MESFET cascode amplifiers integrated on a 45nm SOI CMOS technology for RFIC applications: Topic/category: 3D and power technologies</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7969257&Exemplar=1&LAN=DE A1 Mehr, P. H. A1 Lepkowski, W. A1 Zhang, X. A1 Moallemi, S. A1 Kitchen, J. A1 Thornton, T. J. YR 2017 SN 2376-6697 K1 MESFETs K1 Logic gates K1 MOSFET K1 Radio frequency K1 CMOS technology K1 Power amplifiers K1 silicon-on-insulator K1 cascode SP 342 OP 345 LK http://dx.doi.org/https://doi.org/10.1109/ASMC.2017.7969257 DO https://doi.org/10.1109/ASMC.2017.7969257 SF ELIB - SuUB Bremen
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